ema6 / UMA6N transistors emitter common (dual digital transistors) ema6 / UMA6N ! ! ! ! feature 1) two dta114t chips in a emt or umt package. ! ! ! ! equivalent circuit ema6 / UMA6N r 1 r 1 (1) (3) (4) (5)/(6) (2) ! ! ! ! package, marking, and packaging specifications type ema6 emt5 a6 t2r 8000 UMA6N umt5 a6 tr 3000 package marking code basic ordering unit (pieces) ! ! ! ! absolute maximum ratings (ta=25 c) parameter ? 1 120mw per element must not be exceeded. symbol v cbo v ceo v ebo i c pc tj tstg limits ? 50 ? 50 ? 5 ? 100 150(total) 150 ? 55 ~ + 150 unit v v v ma mw ? 1 c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ! ! ! ! external dimensions (units : mm) each lead has same dimensions rohm : emt5 ema6 UMA6N each lead has same dimensions 0.9 0.15 0to0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) ( 6 ) 0.2 1.25 ( 2 ) 0.65 ( 3 ) rohm : umt5 eiaj : sc-88a 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 3 ) ( 5 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions transition frequency bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t ? 50 ? 50 ? 5 ? ? ? 100 ? ? ? ? ? ? ? 250 ? 250 ? ? ? ? 0.5 ? 0.5 ? 0.3 600 ? v v v a a v ? mhz ? r 1 32.9 47 61.1 k ? i c =? 50 a i c =? 1ma i e =? 50 a v cb =? 50v v eb =? 4v v eb = 10v, i e =? 5ma, f = 100mhz i c /i b =? 5ma/ ? 0.5ma v ce /i c =? 5v/ ? 1ma ? transition frequency of the device. collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio input resistance
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